Mode spacing anomaly in InGaN blue lasers
Identifieur interne : 014311 ( Main/Repository ); précédent : 014310; suivant : 014312Mode spacing anomaly in InGaN blue lasers
Auteurs : RBID : Pascal:99-0099025Descripteurs français
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- 4255P, 7866F, 7350G, 7350M, 4260B, 8105E, Etude théorique, Laser semiconducteur, Indium nitrure, Gallium nitrure, Indice réfraction, Densité porteur charge, Gouttelette électron trou, Recombinaison, Gain, Plasma solide, Indium composé, Gallium composé, Semiconducteur III-V, Mode laser, Recombinaison électron trou, Plasma semiconducteur.
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Abstract
An important experimental observation in InGaN laser diodes (LDs), which is not yet fully understood, is that the measured mode spacing of the lasing spectra could be one order of magnitude larger than that calculated from the known cavity length. The aim of this letter is to shed light on the nature of the mode spacing anomaly in InGaN LDs. We have derived a formula which accurately determines the mode spacing in InGaN LDs. Our analysis has shown that the discrepancy between the expected and observed mode spacing is due to the effect of carrier-induced reduction of the refractive index under lasing conditions and this discrepancy decreases and naturally disappears as the threshold carrier density required for lasing decreases. Since the carrier-induced reduction of the refractive index is expected only from an electron-hole plasma state, our results naturally imply that electron-hole plasma recombination provides the optical gain in InGaN LDs, like in all other conventional III-V semiconductor lasers. The implications of our results on the design of nitride optoelectronic devices are also discussed. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Mode spacing anomaly in InGaN blue lasers</title><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0099025</idno><date when="1999-02-22">1999-02-22</date><idno type="stanalyst">PASCAL 99-0099025 AIP</idno><idno type="RBID">Pascal:99-0099025</idno><idno type="wicri:Area/Main/Corpus">015959</idno><idno type="wicri:Area/Main/Repository">014311</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Electron-hole droplets</term><term>Electron-hole recombination</term><term>Gain</term><term>Gallium compounds</term><term>Gallium nitrides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium nitrides</term><term>Laser modes</term><term>Recombination</term><term>Refractive index</term><term>Semiconductor lasers</term><term>Semiconductor plasma</term><term>Solid-state plasma</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>7866F</term><term>7350G</term><term>7350M</term><term>4260B</term><term>8105E</term><term>Etude théorique</term><term>Laser semiconducteur</term><term>Indium nitrure</term><term>Gallium nitrure</term><term>Indice réfraction</term><term>Densité porteur charge</term><term>Gouttelette électron trou</term><term>Recombinaison</term><term>Gain</term><term>Plasma solide</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Mode laser</term><term>Recombinaison électron trou</term><term>Plasma semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An important experimental observation in InGaN laser diodes (LDs), which is not yet fully understood, is that the measured mode spacing of the lasing spectra could be one order of magnitude larger than that calculated from the known cavity length. The aim of this letter is to shed light on the nature of the mode spacing anomaly in InGaN LDs. We have derived a formula which accurately determines the mode spacing in InGaN LDs. Our analysis has shown that the discrepancy between the expected and observed mode spacing is due to the effect of carrier-induced reduction of the refractive index under lasing conditions and this discrepancy decreases and naturally disappears as the threshold carrier density required for lasing decreases. Since the carrier-induced reduction of the refractive index is expected only from an electron-hole plasma state, our results naturally imply that electron-hole plasma recombination provides the optical gain in InGaN LDs, like in all other conventional III-V semiconductor lasers. The implications of our results on the design of nitride optoelectronic devices are also discussed. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>74</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Mode spacing anomaly in InGaN blue lasers</s1></fA08><fA11 i1="01" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA11 i1="02" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>1066-1068</s1></fA20><fA21><s1>1999-02-22</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0099025</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>An important experimental observation in InGaN laser diodes (LDs), which is not yet fully understood, is that the measured mode spacing of the lasing spectra could be one order of magnitude larger than that calculated from the known cavity length. The aim of this letter is to shed light on the nature of the mode spacing anomaly in InGaN LDs. We have derived a formula which accurately determines the mode spacing in InGaN LDs. Our analysis has shown that the discrepancy between the expected and observed mode spacing is due to the effect of carrier-induced reduction of the refractive index under lasing conditions and this discrepancy decreases and naturally disappears as the threshold carrier density required for lasing decreases. Since the carrier-induced reduction of the refractive index is expected only from an electron-hole plasma state, our results naturally imply that electron-hole plasma recombination provides the optical gain in InGaN LDs, like in all other conventional III-V semiconductor lasers. 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